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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Anomaly in the Ga‐Si phase diagram: Nonretrograde solubility of Ga in Si layers grown by liquid‐phase epitaxy
TL;DR: In this paper, the diffusion coefficient of Si in liquid Ga is estimated from layer thickness data to be DGaSi=0.0235 exp(−4016 K/T) cm2/s.
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Analytical modeling of n-type doped silicon elastic constants and frequency-compensation of Lamé mode microresonators
TL;DR: In this paper, an empirical exponential expression is derived for the uniaxial deformation potential as a function of doping level using the experimental data available in the literature, which can be used to determine the deformation constant for n-type doping level, otherwise challenging to be measured experimentally.
Journal ArticleDOI
The effect of small amounts of B and Sn on the sintering of silicon
TL;DR: The sinterability of a Si powder, which undergoes limited densification at 1350°C, was remarkably influenced by small additions of B and/or Sn as mentioned in this paper.
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Rapid Melt Growth of Germanium Tunnel Junctions
TL;DR: In this paper, a rapid melt growth process for forming interband n + p+ Esaki tunnel junctions on Ge is shown, which uses a phosphorus spin-on diffusant and rapid thermal annealing to form the n+ side of the junction, while for the p+ side, a deposited aluminum film serves both as acceptor dopant source and a melt for epitaxial regrowth of p + Ge.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
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Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.