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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Effects of small amounts of transition metals on boron removal during electromagnetic solidification purification of silicon with Al–Si solvent
TL;DR: In order to strengthen B removal during purification of Si with Al-Si solvent, small amounts ( small amounts) of B removal were added to the Si solvent in this paper, which strengthened B removal.
Journal ArticleDOI
Oxygen segregation in Czochralski silicon growth
Wen Lin,D. W. Hill +1 more
TL;DR: In this article, the Czochralski crystal-pulling technique was used to examine the oxygen segregation behavior in silicon and the results indicate that the equilibrium segregation coefficient of oxygen is smaller than unity, and is estimated to be ∼ 0.25.
Journal ArticleDOI
High performance germanium N + /P and P + /N junction diodes formed at low Temperature (<=380 °C) using metal-induced dopant activation
TL;DR: Very low resistivity (2.2×10−4Ωcm) and shallow (92nm) junction with high degree of dopant activation are achieved especially in N+∕P junction formed at 360°C on Ge epitaxially grown on Si using complementary metaloxide semiconductor process compatible-metal (Co) induced dopant activations as mentioned in this paper.
Journal ArticleDOI
The motion of liquid alloy zones along a bar under the influence of an electric current
TL;DR: In this article, a critical examination is made of the interpretation of experiments reported by Pfann et al. (1957) in which molten alloy zones were observed to move along the surface of a germanium bar through which a current was passed.
Journal ArticleDOI
Diffusion of ion implanted Sn in Si, Si1−xGex, and Ge
P. Kringho,Robert Elliman +1 more
TL;DR: In this paper, the chemical distribution of Sn ion implanted into Si, Si0.79Ge 0.21, Si 0.47Ge0.53, and Ge was measured with secondary ion mass spectrometry, and the diffusion coefficient of Sn was extracted as a function of temperature.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.