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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Effects of Phosphorus Doping and Postgrowth Laser Annealing on the Structural, Electrical, and Chemical Properties of Phosphorus-Doped Silicon Films
TL;DR: In this paper, the effect of nonequilibrium phosphorus incorporation into Si lattices and subsequent annealing on structural, electrical, and bonding properties of P-doped Si films is investigated.
Journal ArticleDOI
Segregation and trapping of erbium at a moving crystal-amorphous Si interface
TL;DR: In this paper, the authors studied the segregation and trapping of Er during solid-phase crystallization of amorphous Si on crystalline Si in a concentration range of 1016-5×1020 Er/cm3.
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Removal of Cu, Mn and Na in multicrystalline silicon by directional solidification under low vacuum condition
TL;DR: A multicrystalline silicon ingot was obtained from metallurgical-grade silicon after directional solidification under low vacuum condition, and the concentration distributions of metal impurities such as copper (Cu), manganese (Mn), and sodium (Na) along the growth direction of the ingot were investigated.
Journal ArticleDOI
Low-Temperature Process for the Fabrication of Low-Boron Content Bulk Si from Si–Cu Solution with Zr Addition
Yongsheng Ren,Kazuki Morita +1 more
TL;DR: In this paper, a novel approach was put forward to remove B from Si by utilizing Zr as the additive during solidification, whereby using the Si-Cu solvent, bulk Si with large area and low boron content was obtained.
Journal ArticleDOI
Sub-500/spl deg/C solid-phase epitaxy of ultra-abrupt p/sup +/-silicon elevated contacts and diodes
TL;DR: In this article, a solid-phase-epitaxy (SPE) process was proposed for epitaxially growing elevated contacts and near-ideal diode junctions of Al-doped Si in contact windows to the Si substrate.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.