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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Application of power loss calculation to estimate the specific contact resistance of the screen-printed silver ohmic contacts of the large area silicon solar cells
TL;DR: In this paper, a new experimental procedure has been evolved to assess the value of ρc of the screen-printed front silver (Ag) thick-film metal contact to the silicon surface.
Journal ArticleDOI
Solidification refining of MG-Si by Al-Si alloy under rotating electromagnetic field with varying frequencies
TL;DR: In this article, experiments under rotating electromagnetic field (REMF) with varying frequencies have been carried out to develop an effective solidification purification process by Al-Si alloy refining method.
Journal ArticleDOI
Rutherford backscattering study of crystal orientation dependent annealing effects in high-dose antimony implanted silicon
W. J. M. J. Josquin,Y. Tamminga +1 more
TL;DR: In this article, the authors used Rutherford backscattering to study the behavior of damage and antimony concentration profiles for 〈100〉 and 》111〉 substrates for various annealing treatments, implantation temperatures and implantation energies.
Journal ArticleDOI
Effect of solidification conditions on the silicon growth and refining using Si–Sn melt
TL;DR: In this article, the solidification refining of Si using a Si-Sn solvent was investigated under various cooling conditions: slow cooling, slow cooling with electromagnetic stirring, and directional solidification with the aim of developing a novel low-cost route for solar-grade Si production.
Journal ArticleDOI
Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping
Mao Wang,E. García-Hemme,Yonder Berencén,René Hübner,Yufang Xie,Yufang Xie,Lars Rebohle,Chi Xu,Harald Schneider,Manfred Helm,Manfred Helm,Shengqiang Zhou +11 more
TL;DR: In this paper, a room-temperature MWIR photodetector based on Si hyperdoped with Te was presented, which exhibited a spectral photoresponse up to 5 µm and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0-1.9 µm.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
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Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.