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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Observation of iron pileup and reduction of SiO2 at the Si‐SiO2 interface
TL;DR: It was found by secondary ion mass spectrometry in-depth profiling technique that approximately 1×1020 iron atoms/cm3 accumulated at the Si-SiO2 interface of oxidized silicon crystals where iron was introduced by the indiffusion prior to the oxidation at 1000°C and above as discussed by the authors.
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Heteroepitaxial lateral overgrowth of GexSi1-x over SiO2/Si structures by liquid phase epitaxy
TL;DR: In this article, the authors investigate heteroepitaxial lateral overgrowth (HELO) of Ge x Si 1− x and Ge over thermally oxidized Si and show that the growth parameters which govern the shape, overgrowth width w and thickness h of the HELO Ge xSi 1−x and Ge lamellae are presented.
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Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts
Ganesh Hegde,R. Chris Bowen +1 more
TL;DR: In this article, the effect of realistic metal electronic structure on the lower limit of resistivity in [100] oriented n-Si is investigated using full band Density Functional Theory and Semi-Empirical Tight Binding calculations.
Journal ArticleDOI
Microstructure of metallurgical grade silicon and its acid leaching behaviour by alloying with calcium
TL;DR: In this article, the microstructure of silicon was modified by alloying with 3-10 wt-% of calcium, and the influence of the concentration of alloying elements and the solidification conditions on the leaching efficiency was evaluated.
Journal ArticleDOI
Lattice positions of implanted ions in silicon crystals
H. P. Frerichs,S. Kalbitzer +1 more
TL;DR: In this article, heavy ions from all groups of the periodic system have been implanted at keV energies into Si at room temperature, and the samples have been analyzed in their as-implanted state by high resolution ion backscattering of 0.5 MeV 4He ions.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.