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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Refining of metallurgical silicon by directional solidification
TL;DR: In this paper, the mold velocity out of the hot zone of the furnace changed from one experiment to another in the range between 5 and 110μm−s−1, and the results showed that the bottom and middle of the ingots are purer than the corresponding metallurgical silicon from which they solidified.
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Strong Sub-band-gap Infrared Absorption in Silicon Supersaturated with Sulfur
TL;DR: In this article, the optical absorption coefficient over the range of 1200-2500nm is uniformly high at ∼2.5×104∕cm, which is at least an order of magnitude greater than the maximum value attributable to free carriers.
Journal ArticleDOI
Diffusion of n-type dopants in germanium
TL;DR: In this paper, the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation is discussed. But, the effect of point defect on Germanium is not considered.
Journal ArticleDOI
Frequency dependence of the reverse-biased capacitance of gold-doped silicon P + N step junctions
Chih-Tang Sah,V.G.K. Reddi +1 more
TL;DR: The experimentally observed frequency dependences of the reverse-biased capacitance of gold-doped silicon step junctions over the frequency range from 10 cps to 30 Mc are found to be in agreement with a simple physical model which takes into account the charge condition and the charging and discharging time constant of the deep-gold acceptor level in the transition region of the junction.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
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Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.