Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Book ChapterDOI
LASER ANNEALING OF HIGH DOSE P+, As+, B+, O+ AND C+ IMPLANTED Si
TL;DR: In this paper, a Q-switched ruby laser with an enrgy density of 1.2-1.5 J/cm 2 was used to implant p-and n-type (100) CZ Si.
Proceedings ArticleDOI
Ge shallow junction formation by As implantation and flash lamp annealing
TL;DR: Shallow, about 20 nm, depth n+/p junction of Ge was successfully fabricated by As+ implantation and FLA, although FLA parameters were not optimized yet.
Journal ArticleDOI
Doping of liquid phase epitaxial layers of InGaAsP with group IV elements
TL;DR: Germanium doping on InGaAsP epitaxial layers grown by liquid phase epitaxy produces n-type conduction with a net distribution coefficient k Ge ≈ 5 × 10 -3 as mentioned in this paper.
Journal ArticleDOI
Effects of heat treatment on epitaxial silicon solar cells on metallurgical silicon substrates
TL;DR: In this paper, large-area solar cells with an air mass one efficiency of about 9% were prepared by depositing a p-n junction structure onto the metallurgical silicon substrate.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.