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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Impurity phases and their removal in Si purification with Al–Si alloy using transition metals as additives
TL;DR: In this paper, the effects of transition metals such as Zr, Hf, and Ti on the removal of impurities (B, P, Fe, Al, Ca, Ti, V, Ni, Mn, Zr and Hf) were investigated by electron probe microanalysis.
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Gold-Hyperdoped Black Silicon With High IR Absorption by Femtosecond Laser Irradiation
TL;DR: In this paper, gold-doped-textured silicon (Si) was obtained by femtosecond laser irradiation and a gold silicide phase was formed at textured Si surface.
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Calculation of distribution coefficients of donors in III-V semiconductors
TL;DR: In this paper, the authors extended ternary phase diagrams to the calculation of distribution coefficients of impurities in III-V semiconductors with no adjustable parameters, the calculation requiring only the temperatures and entropies of fusion, binary phase diagrams and lattice parameters of the relevant IIIV compounds, and the tetrahedral covalent radii, electronegativities, molar volumes and atomization energies of the donor impurities.
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.