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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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References
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Journal ArticleDOI
Properties of Silicon Doped with Iron or Copper
C. B. Collins,R. O. Carlson +1 more
TL;DR: In this article, it was shown that the electrical activity of iron is reversible in the range of 0.55 ev from the conduction band on standing at room temperature and 1.5 ǫ-1.5 ð ðÞ ðµ ð ¼ Þ ÞÞÔ Þ¼ üÔÞ
Journal ArticleDOI
Distribution of Solute in Crystals Grown from the Melt. Part II. Experimental
TL;DR: In this paper, the distribution coefficients of a number of solute elements in germanium crystals grown from the melt are examined in light of the theory of Part I. The incorporation of solutes into the crystal is shown to depend critically upon the transport processes occurring in the melt.
Journal ArticleDOI
Densitometric and Electrical Investigation of Boron in Silicon
TL;DR: In this paper, x-ray diffraction, precision density, and electrical resistivity studies of boron-doped silicon have been conducted and it has been shown that Boron resides in the silicon lattice substitutionally.