Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Doping of epitaxial silicon: Effect of dopant partial pressure☆☆☆
P. Rai-Choudhury,E.I. Salkovitz +1 more
TL;DR: In this paper, the partial pressure dependence of doping level in the epitaxial layers of silicon is measured over a wide range of dopant partial pressures at low doping levels, solid solutions of boron and arsenic obey dilute solution theory.
Journal ArticleDOI
Anomalous diffusion in semiconductors—a quantitative analysis
TL;DR: In this paper, a quantitative analysis is given of anomalous impurity diffusion in silicon, and is found to be in excellent agreement with experiment, based on the theory of work-hardening in metals.
Journal ArticleDOI
SiP precipitation within the doped silicon lattice, concomitant with phosphorus predeposition
TL;DR: In this article, it was shown that the surface concentration of phosphorus increases with predeposition time attaining values well above the solid solubility; in addition, flat rod-like SiP precipitates grow with the time of predosition, according to a parabolic law.
Proceedings ArticleDOI
High efficiency GaAs/Ge monolithic tandem solar cells
S.P. Tobin,S.M. Vernon,C. Bajgar,V.E. Haven,L.M. Geoffroy,M.M. Sanfacon,D.R. Lillington,R. E. Hart,Keith Emery,R.J. Matson +9 more
TL;DR: In this article, two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are investigated to address both higher efficiency and reduced weight.
Journal ArticleDOI
Thermodynamic Modeling of the Au-Bi-Sb Ternary System
TL;DR: In this paper, the phase diagram of the Au-In-Sb ternary system is used to predict the interface reaction between In-based solders and the Au substrate.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.