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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Dissertation
Molten Salt Electrodeposition of Silicon in Cu-Si
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Journal ArticleDOI
Light emission from silicon with tin-containing nanocrystals
Søren Roesgaard,Jacques Chevallier,Peter I. Gaiduk,John Lundsgaard Hansen,Pia Jensen,Arne Nylandsted Larsen,Axel Svane,Peter Balling,Brian Julsgaard +8 more
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Journal ArticleDOI
Silicon solar cells produced by corona discharge
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Doping of epitaxial silicon
TL;DR: In this article, the observed temperature dependence of the doping concentration of As and P in epitaxial layers of Si is reviewed and the basis of a possible alternative interpretation is indicated.
Journal ArticleDOI
Enabling n-type polycrystalline Ge junctionless FinFET of low thermal budget by in situ doping of channel and visible pulsed laser annealing
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TL;DR: A low-thermal-budget n-type polycrystalline Ge (poly-Ge) channel that was prepared by plasma in-situ-doped nanocrystalline ge (nc-Ge), and visible pulsed laser annealing exhibits a high electrically active concentration of 2 × 1019 cm−3 and a narrow Raman FWHM of 3.9 cm −1 as mentioned in this paper.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.