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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Thermodynamic Calculations for the Dephosphorization of Silicon Using Molten Slag
In-Ho Jung,Yumin Zhang +1 more
TL;DR: In this paper, the dephosphorization reaction equilibria between molten Si and CaO-based slags were calculated using the thermodynamic databases for Si alloy and slags.
Journal ArticleDOI
Theory of solubility of interstitial impurities in germanium and silicon
TL;DR: In this article, a theory of solubility is developed which is based on estimating the change in energy and in entropy when an impurity is placed in an interstitial site in the lattice.
Journal ArticleDOI
Improved fracture strength of multicrystalline silicon by germanium doping
TL;DR: In this paper, the impact of germanium doping on the fracture strength of multicrystalline silicon (mc-Si) wafers was investigated by three-point bending testing.
Journal ArticleDOI
Solute segregation in a lid driven cavity: Effect of the flow on the boundary layer thickness and solute segregation.
TL;DR: In this article, the effect of convective flows, ranging from laminar to fully turbulent, on solute segregation in directional solidification configurations is studied. And a scaling analysis aiming at the determination of the solute boundary layer thickness is proposed.
Journal ArticleDOI
Effect of kinetics on P removal by Al-Si solvent refining at low solidification temperature
TL;DR: In this article, the effect of kinetics on P removal in Al-Si-P system was investigated and three sets of experiments with different solidification temperature ranges have been carried out.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.