Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Journal ArticleDOI
Improved germanium n + /p junction diodes formed by coimplantation of antimony and phosphorus
TL;DR: In this article, the authors aimed at understanding the challenge of forming highly rectifying n+/p diode as well as enhancing rectification by using antimony and P coimplantation process.
Book ChapterDOI
Chapter 2 Impurity Germanium and Silicon Infrared Detectors
TL;DR: In this article, the authors focus on infrared (IR) detectors that are produced by the addition of certain impurity atoms to crystals of germanium (Ge) or silicon (Si).
Journal ArticleDOI
On the diffusion and activation of n-type dopants in Ge
Jan Vanhellemont,Eddy Simoen +1 more
TL;DR: In this paper, the diffusion and activation of n-type dopants in Ge are discussed with particular emphasis on shallow junction formation, and it is shown that both the increase of dopant diffusivity and the reduced fraction of substitutional dopant with increasing dopant concentration are determined by (double) negatively charged vacancies pairing with dopant atoms.
Journal ArticleDOI
Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
C. D. Weis,Cheuk Chi Lo,Cheuk Chi Lo,V. Lang,Alexei M. Tyryshkin,Richard George,Kin Man Yu,Jeffrey Bokor,Stephen Aplin Lyon,John J. L. Morton,Thomas Schenkel +10 more
TL;DR: In this article, the authors performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28 and showed that damage from ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (Bpp=12μT and long spin coherence times (T2=0.7 ms, at temperature T=8 K).
Journal ArticleDOI
Comparison of segregations formed in unmodified and Sr-modified Al–Si alloys studied by atom probe tomography and transmission electron microscopy
Jenifer Barrirero,Jenifer Barrirero,Michael Engstler,Naureen Ghafoor,Niels de Jonge,Magnus Odén,Frank Mücklich +6 more
TL;DR: In this article, the composition of the eutectic Si phase in unmodified and Sr-modified alloys was analyzed and compared by atom probe tomography and (scanning) transmission electron microscopy.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.