Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Journal ArticleDOI
DLTS of silver in germanium: evidence for an amphoteric impurity
TL;DR: In this article, the defect parameters of substitutional silver in germanium have been investigated with DLTS, and it was shown that the acceptor level with ionisation enthalpies Ev+0.116 eV, Ec-0.261 eV and Ec- 0.035 eV has not been reported before.
Journal ArticleDOI
Low capacitance point diodes fabricated with focused ion beam implantation
L. Bischoff,B. Schmidt +1 more
TL;DR: In this article, low capacitance p þ n point diodes were fabricated by combination of sputtering and implantation of a 35 keV Ga focused ion beam through a thin oxide layer on a silicon substrate.
Journal ArticleDOI
Photoluminescence from heavily doped Si layers grown by liquid‐phase epitaxy
J. Wagner,W. Appel,M. Warth +2 more
TL;DR: In this paper, the band-gap shrinkage was found to be larger in heavily gallium-doped than in boron−doped silicon, indicating a dependence of this shrinkage on the chemical nature of the dopant atoms.
Book ChapterDOI
The Electron as a Chemical Entity
TL;DR: In this article, the properties of solid crystalline phases in which there exists conduction electrons and holes, the activities of which are dependent on the presence of imperfections and impurities in the crystal.
Journal ArticleDOI
Thermal stability of ultra-shallow junctions in silicon formed by molecular-beam epitaxy using boron delta doping
Phillip E. Thompson,J Bennett +1 more
TL;DR: In this article, low-temperature (320 °C) molecular-beam epitaxy was used to form highly conductive, ultra-shallow layers in silicon using boron delta doping.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.