Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Silicide contacts for shallow junction devices
TL;DR: In this article, the miniaturization of integrated circuit devices necessitates modification of the present design and fabrication of their electrical contacts, and the requirements for contacts to sshallow junction devices are listed.
Journal ArticleDOI
Hybrid Laser Activation of Highly Concentrated Bi Donors in Wire-δ-Doped Silicon
Koichi Murata,Koichi Murata,Yuhsuke Yasutake,Koh-ichi Nittoh,Kunihiro Sakamoto,Susumu Fukatsu,Kazushi Miki,Kazushi Miki +7 more
TL;DR: In this paper, a serial combination of laser exposure and furnace annealing is demonstrated to activate Bi donors that are wire-δ-doped in Si. The photoluminescence reveals that the dense Bi atoms are activated so efficiently that an impurity band develops upon rapid radiation heating of the focused area close to the melting point.
Journal ArticleDOI
P removal from Si by Si-Ca-Al alloying-leaching refining: Effect of Al and the CaAl2Si2 phase
Mengyi Zhu,Sheng-Ying Yue,Sheng-Ying Yue,Sheng-Ying Yue,Guixuan Wu,Kai Tang,Yijiang Xu,Jafar Safarian +7 more
TL;DR: In this paper, a series of Si-Ca-Al alloys were obtained to investigate the role of alloy composition and the CaAl2Si2 phase in P segregation and separation.
Journal ArticleDOI
GeAs as a novel arsenic dimer source for n‐type doping of Ge grown by molecular beam epitaxy
TL;DR: In this article, the electron concentration in the arsenic-doped Ge films depends on the GeAs cell temperature with an activation energy of 2.5 eV, which coincides with the arsenic dimer beam flux generated from GeAs.
Proceedings ArticleDOI
Doped Silicon Temperature Compensation of Surface Acoustic Wave Devices
Yiming Ma,Xianhao Le,Srinivas Merugu,Jaibir Sharma,Nan Wang,Amit Lal,Chengkuo Lee,Eldwin J. Ng +7 more
TL;DR: In this article, doped silicon is employed as the temperature compensating material while a thin-film piezoelectric ScAIN is employed for actuation for SAW resonators with various inplane orientations under different temperatures.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.