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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Interaction of aluminum with hydrogenated amorphous silicon at low temperatures
TL;DR: In this paper, annealing effects on aluminum/hydrogenated amorphous silicon (a•Si:H) contacts in the temperature range from 100 to 300°C were studied.
Journal ArticleDOI
Effect of complex formation on diffusion of arsenic in silicon
Richard B. Fair,Gary R. Weber +1 more
TL;DR: In this paper, a model was proposed in which As+ diffuses via a simple vacancy mechanism while in quasiequilibrium with [VSiAs2] complexes, and an effective diffusion coefficient was derived using this model: DAs=2DiCA/(1+8 K2′ CA3) where CA is the As+ concentration and K 2′ is a collective parameter that depends upon As+ surface concentration and the diffusion temperature.
Journal ArticleDOI
Colossal injection of catalyst atoms into silicon nanowires
Oussama Moutanabbir,Dieter Isheim,Horst Blumtritt,Stephan Senz,Eckhard Pippel,David N. Seidman +5 more
TL;DR: An atomic-level, quantitative study of the phenomenon of catalyst dissolution by three-dimensional atom-by-atom mapping of individual Al-catalysed Si nanowires using highly focused ultraviolet-laser-assisted atom-probe tomography.
Journal ArticleDOI
Electrical Behavior of Group III and V Implanted Dopants in Silicon
TL;DR: In this article, the anneal behavior of layers implanted with dopants from column III (B, Al, Ga, and Tl) and column V (As, Sb, and Bi) in silicon substrates has been investigated.
Journal ArticleDOI
Physical processes associated with the deactivation of dopants in laser annealed silicon
TL;DR: In this paper, the electrical characteristics of the deactivation behavior of common dopants (P, B, and Sb) across a range of concentrations and annealing conditions were investigated.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.