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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Nucleation‐controlled overgrowth of silicon on silica
H. J. Leamy,C. J. Doherty +1 more
TL;DR: In this article, the nucleation-controlled overgrowth of silicon single crystals on an oxidized silicon wafer was demonstrated, where the crystals were grown from an Al-Si liquid film by nucleation at via holes in the oxide substrate.
Journal Article
Room-temperature sub-band gap optoelectronic response of hyperdoped silicon
David Hutchinson,Jay Mathews,Joseph T. Sullivan,Daniel Recht,James Williams,Jeffrey M. Warrender,Peter D. Persans,Michael J. Aziz,Jonathan P. Mailoa,Austin Akey,Christine B Simmons,Joseph Sullivan,Mark T. Winkler,Anthony Buonassisi +13 more
TL;DR: A rapid and repeatable laser-based hyperdoping method that incorporates supersaturated gold dopant concentrations on the order of 10(20) cm(-3) into a single-crystal surface layer ~150 nm thin offers a possible path to tunable, broadband infrared imaging using silicon at room temperature.
Journal ArticleDOI
Employing microsecond pulses to form laser‐fired contacts in photovoltaic devices
Ashwin S. Raghavan,Todd Palmer,Katherine C. Kragh-Buetow,Anna C. Domask,Edward W. Reutzel,Suzanne E. Mohney,Tarasankar Debroy +6 more
TL;DR: In this paper, the influence of changes in laser processing parameters on contact morphology, resistance, and composition when using microsecond pulses has been fully evaluated, and the results indicate that contacts are hemispherical or half-ellipsoidal in shape.
Journal ArticleDOI
Low-temperature dopant activation technology using elevated Ge-S/D structure
TL;DR: In this paper, the dopant activation annealing of an elevated Ge-S/D structure formed on Si was investigated for application in advanced CMOSFET fabrication, and it was shown that the location of the junction after the 900-°C anneal can be as shallow as ∼20nm beneath the original Si interface for both p+/n and n+/p diodes.
Journal ArticleDOI
A simple CAD technique to develop a high-frequency transistor
TL;DR: In this paper, the emitter and base impurity concentration profiles and the epitaxial thickness of the collector of n-p-n microwave transistors have been optimized for f/SUB max/ by a simple computer-aided design technique.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
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Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.