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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Non-equilibrium dopants incorporation in silicon melted by laser pulses
TL;DR: In this article, a review of experimental results, heat and mass transport calculations, is presented together with the latest models for solute redistribution during rapid solidification, leading to cell structure and other factors limiting the maximum concentration of incorporated dopants.
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Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics
Masanobu Miyao,Taizoh Sadoh +1 more
TL;DR: In this paper, a review of recent progress in the crystal growth of group-IV-based semiconductor-on-insulators is reviewed from physical and technological viewpoints, including SiGe-mixing-triggered rapid-melting growth enables formation of hybrid (100) (110) (111)-orientation Ge-oninsulator (GOI) structures, which show defect-free GOI with very high carrier mobility.
Journal ArticleDOI
High efficiency UMG silicon solar cells: impact of compensation on cell parameters
Fiacre Rougieux,Christian Samundsett,Kean Chern Fong,Andreas Fell,Peiting Zheng,Daniel Macdonald,Julien Degoulange,Roland Einhaus,Maxime Forster +8 more
TL;DR: In this paper, high efficiency solar cells have been fabricated with wafers from an n-type Czochralski grown (Cz) ingot using 100% Upgraded Metallurgical-Grade (UMG) silicon feedstock.
Journal ArticleDOI
Solubilities and equilibrium distribution coefficients of oxygen and carbon in silicon
TL;DR: In this paper, the authors measured the solubility of silicon at 1673 K in an oxygen atmosphere for 1800 ks and then measured the oxygen content in the solid silicon equilibrated with silica by inert gas fusion-IR absorption method.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.