Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Book ChapterDOI
Doping and conductivity in widegap II-VI compounds
TL;DR: The achievement of good bipolar conductivity in widegap semiconductors has been an elusive aim of research for many years as mentioned in this paper, and an extensive review on II-VI compounds and their general properties has been presented by Hartmann et al. in 1982.
Journal ArticleDOI
Comparison of solubility limits and electrical activities for antimony and arsenic ion implanted silicon
TL;DR: Ion channeling and electrical measurements have been employed to determine the solubility limits and electrical activities for antimony and arsenic ion implanted silicon following a variety of annealing schedules.
Journal ArticleDOI
Über die zeitliche stabilität von getempertem, reinem silizium
TL;DR: In this paper, an beiden Gruppen ganzlich unterschiedliche Eigenschaften gefunden gegluhten Probestucke were untersucht.
Book ChapterDOI
Resistivity fluctuations in highly compensated ntd silicon
J. M. Meese,Paul J. Glairon +1 more
TL;DR: In this article, the resistivity fluctuation Δρ/\(\overline \rho) as a function of compensation ratio in NTD-Si is presented which are valid near exact compensation.
Journal ArticleDOI
Structural evolution of implanted vicinal Si(111) during annealing via analysis of the dipole contribution
TL;DR: In this paper, the amplitude and orientation of the dipole at the surface layer of implanted vicinal Si(111) showed the evolution of its restructuring, and the different electronegativities between Si and participated P atoms changed the dipolar configuration of Si surface.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.