Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
Reads0
Chats0
TLDR
In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
More filters
Journal ArticleDOI
Thermodynamic and kinetic properties of indium-implanted silicon I: Moderate temperature recovery of the implant damage and metastability effects
TL;DR: In this paper, a strong correlation between the substitutionality of indium and the sheet conductivity is found, and the observed conductivity decrease with increasing annealing temperature is attributed to the loss of substitutionality by the indium.
Journal ArticleDOI
Improving crystallinity of femtosecond-laser hyperdoped silicon via co-doping with nitrogen
TL;DR: In this paper, a laser hyperdoped silicon with high crystallinity in doped layer is obtained by method of femtosecond laser irradiation in NF3/SF6 gas mixture.
Journal ArticleDOI
Calculation of Ohmic Contact Resistance at a Metal/Silicon Interface
TL;DR: The lower limit of the contact resistance at a metal/Si interface is in the order of 10 -9 Ω cm 2, which is somewhat lower than the minimum of the experimental data as mentioned in this paper.
Journal ArticleDOI
Sub- $10^{-\textsf{9}}\,\,\Omega\cdot{\text{cm}}^{\textsf{2}}$ Specific Contact Resistivity (Down to $\textsf{4.4}\times\textsf{10}^{-\textsf{10}}\,\,\Omega\cdot\textsf{cm}^{\textsf{2}}$ ) for Metal Contact on Ga and Sn Surface-Segregated GeSn Film
Ying Wu,Wei Wang,Saeid Masudy-Panah,Yang Li,Kaizhen Han,Liuhuiquan He,Zheng Zhang,Dian Lei,Shengqiang Xu,Yuye Kang,Xiao Gong,Yee-Chia Yeo +11 more
TL;DR: This is the lowest contact resistivity for any nonlaser-annealed contacts investigated in nano-scale transmission line method test structures and the benefits of Ga and Sn surface segregation ontex-math notation="LaTeX" were investigated.
References
More filters
Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.