Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
Reads0
Chats0
TLDR
In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
More filters
Proceedings ArticleDOI
Super Activation of Highly Surface Segregated Dopants in High Ge Content SiGe Obtained by Melt UV Laser Annealing
Toshiyuki Tabata,Joris Aubin,Karim Huet,Fulvio Mazzamuto,Yoshihiro Mori,Antonino La Magna,Leonard M. Rubin,Petros Kopalidis,Hao-Cheng Tsai,Dwight Roh,Ronald N. Reece +10 more
TL;DR: In this paper, a nanosecond melt UV laser anneal was used to demonstrate the activation of surface segregated dopants above the solid solubility limit in a high Ge content SiGe substrate.
Journal ArticleDOI
Rapid thermal annealing of shallow Sb‐implanted Si
TL;DR: In this paper, a broadening of the Sb depth distribution and Sb accumulation in the near surface region (<5 nm) were observed for furnace-annealed samples and, to a lesser extent, for those subjected to RTA.
Journal ArticleDOI
Gallium Contacts on p‐type silicon substrates
TL;DR: In this paper, a reduction in contact resistance of palladium/silicon contacts was achieved by the use of a thin intermediate gallium layer, which was found to have similar contact resistance to aluminium/icon contacts on 0.5"Ω"cm silicon.
Journal ArticleDOI
Crystallization of arsenic‐doped hydrogenated amorphous silicon deposited on gallium arsenide
TL;DR: In this article, it was shown that the crystallization temperature of aSi:H films with an As concentration of 2×1020 cm−3 started at a temperature of about 1050 °C.
Journal ArticleDOI
Thermochromic effect with semiconducting layers
A. Pazidis,R. Reineke-Koch +1 more
TL;DR: In this article, a small change in conductivity of a single semiconductive layer on a reflective base material, when the interference effect between front and back side of the layer is used, was shown to change the reflectivity more than 60%.
References
More filters
Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.