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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Maximum solid solubility and distribution coefficient of impurities in germanium and silicon
Journal ArticleDOI
Temperature dependence of doping element incorporation with the chemical vapour deposition of epitaxial silicon (V). Incorporation of arsenic
H. Kühne,R. Sperling +1 more
TL;DR: In this paper, theoretical values of the enthalpies of the different possible incorporation equilibria are calculated for the incorporation of arsenic into the growing silicon epitaxial layer.
Journal ArticleDOI
High thermoelectric power factors in polycrystalline germanium thin films
TL;DR: In this article, a polycrystalline Ge layer on an insulating substrate was synthesized via advanced solid-phase crystallization and control its carrier concentration through the solid phase diffusion of various p- and n-type dopants.
Journal ArticleDOI
Diffusion doping of germanium by sputtered antimony sources
Gianluigi Maggioni,Francesco Sgarbossa,Enrico Napolitani,Walter Raniero,Virginia Boldrini,Sara Carturan,D. R. Napoli,D. De Salvador +7 more
TL;DR: In this article, an antimony sputter deposition and subsequent diffusion annealing in controlled atmosphere was implemented on Ge wafers, for achieving an optimized n+ doping aimed at the final application of these doped contacts to Ge-based radiation detectors.
Journal ArticleDOI
Single Crystalline Germanium-Lead Formed by Laser-Induced Epitaxy
Qian Zhou,Edwin B. L. Ong,Sin Leng Lim,Saumitra K. Vajandar,Thomas Osipowicz,Xiao Gong,Eng Soon Tok,Yee-Chia Yeo +7 more
TL;DR: In this article, the authors performed an anneal on an amorphous GePb layer (1.1 atomic percent of Pb) capped by SiO2, Si3N4, or Al2O3.
References
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Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
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Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.