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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Hyperdoping of Si by ion implantation and pulsed laser melting
TL;DR: In this article, a review of recent work in hyperdoped Si for enhanced sub-band gap photoresponse and a brief discussion on photodetector device performance is presented.
Journal ArticleDOI
Thermodynamic description of the Au–Ge–Sb ternary system
TL;DR: In this paper, the authors used the CALPHAD method to assess the ternary solubility of the Au-Ge-Sb binary system using available experimental information from the published literature.
Journal ArticleDOI
B Removal by Zr Addition in Electromagnetic Solidification Refinement of Si with Si-Al Melt
TL;DR: In this article, the authors investigated a new process of enhancing B removal by adding small amounts of Zr in the electromagnetic solidification refinement of Si with Si-Al melt, and the added Zr was removed by as much as 99.7 pct.
Journal ArticleDOI
Tungsten diffusion in silicon
A. De Luca,Alain Portavoce,Michael Texier,Catherine Grosjean,N. Burle,V. Oison,Bernard Pichaud +6 more
TL;DR: In this article, two doses (1013 and 1015 cm−2) of tungsten (W) atoms were implanted in different Si(001) wafers in order to study W diffusion in Si.
Journal ArticleDOI
Modeling of Thermodynamic Properties and Phase Equilibria of the Si-P System
TL;DR: In this article, a Calphad assessment of the Si-P system is performed based on critical review of all available original experimental thermodynamic and phase equilibrium data, and it is demonstrated that a simple disordered substitutional solution model is sufficient for the liquid phase and that previous assumptions of short-range ordering in the Si liquid phase may not be justified.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.