Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Proceedings ArticleDOI
Large area polycrystalline silicon solar cells on unidirectionally solidified acid-treated metallurgical grade silicon
TL;DR: In this paper, a polycrystalline silicon solar cell was prepared by chemical vapor deposition (CVD) of a p/sup +/-n junction using the hydrogen reduction of trichlorosilane.
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Assessing Ohmic Contacts
TL;DR: In this article, specific contact resistivity PC values obtained theoretically and experimently for a range of semiconducting materials are discussed and matched to the semiconductor materials previously covered.
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Silicon bulk growth for solar cells: Science and technology
TL;DR: In this article, the authors provide an overview of silicon-based solar cell research, especially the development of silicon wafers for solar cells, from the viewpoint of growing both single-crystalline and multicrystalline wafer.
Journal ArticleDOI
Energy Levels in Cobalt Compensated Silicon
TL;DR: In this article, the temperature dependence of resistivity and Hall coefficient in cobalt-doped silicon wafers was measured and a donor level 0.40 eV from the valence band and an acceptor level of 0.53 eV was obtained from the conduction band.
Journal ArticleDOI
Thickness-dependent thermoelectric properties of Si1−xGex films formed by Al-induced layer exchange
Tomoki Ozawa,Kinta Kusano,Masayuki Murata,Atsushi Yamamoto,Takashi Suemasu,Kaoru Toko,Kaoru Toko +6 more
TL;DR: In this article, the authors investigated the thickness of the Si1−xGex (x = 0, 0.4Ge0.6, and 1) layers to improve the thermoelectric output power.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.