Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Rate theory model of dopant incorporation during molecular beam epitaxy: effects of Coulomb repulsion
TL;DR: In this article, a rate theory model for incorporation of Sb atoms into a Si film that predicts such a plateau, provided the Sb impurities are repelled from each other by means of a screened Coulomb interaction.
Journal ArticleDOI
The switching behaviour of Si p‐n junctions doped with iron
K. Thiessen,G. Zech +1 more
Silicon Nanowires - Photovoltaic and Thermoelectric applications
TL;DR: In this article, an array of periodic silicon nanowires were fabricated to produce solar cells and thermoelectric cells, based on silicon nanometers, for energy production.
Book ChapterDOI
Phase relationships in semiconductors
TL;DR: The distribution of solutes in semiconductors has a significant effect on device performance and has therefore been extensively studied as mentioned in this paper, and the theory of equilibrium processes is now relatively well understood but because of difficulties with the analysis of very dilute solutions involved, the amount of reliable experimental data is still rather limited.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.