Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
Reads0
Chats0
TLDR
In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
More filters
Journal ArticleDOI
Doping of Si thin films by low‐temperature molecular beam epitaxy
TL;DR: In this paper, the application of thermal, coevaporative doping with Sb and elemental B during Si molecular beam epitaxy at growth temperatures below ≊300 °C is discussed.
Journal ArticleDOI
Model for nonequilibrium segregation during pulsed laser annealing
TL;DR: In this article, a model is developed which accounts quantitatively for these effects, showing that the interface segregation coefficients can differ from equilibrium values by as much as three orders of magnitude and equilibrium solubility limits may be exceeded by similar magnitudes.
Journal ArticleDOI
An Evolving Method for Solar-Grade Silicon Production: Solvent Refining
Takeshi Yoshikawa,Kazuki Morita +1 more
TL;DR: In this paper, a review of solvent refining processes for SOG-Si purification is presented, emphasizing their advantages and identifying the problems that must be solved to enable metallurgical refining to become the major route for solar-grade silicon production.
Journal ArticleDOI
Silicon Microwire Arrays for Solar Energy-Conversion Applications
TL;DR: In this article, high-structured silicon microwire (Si MW) arrays have been synthesized and characterized as absorbers for solar energy-conversion systems, allowing for efficient collection of photogenerated carriers from impure materials.
Journal ArticleDOI
Erbium in crystal silicon : segregation and trapping during solid phase epitaxy of amorphous silicon
TL;DR: In this paper, it was shown that Er diffuses interstitially in amorphous Si, but is strongly bound at trapping centers, and that the binding enthalpy of these trapping sites causes the amorphus phase to be energetically favorable for Er, so that at low concentrations the Er is nearly completely segregated.
References
More filters
Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.