Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Impact of growth rate on impurities segregation at grain boundaries in silicon during Bridgman growth
TL;DR: In this article, a small scale Bridgman type furnace was used to grow bi-crystal silicon ingots with low angle grain boundaries at three different pulling rates, namely 3, 13, 13 and 40 µm/s.
Book ChapterDOI
Solid-Phase Epitaxy
TL;DR: In this article, solid phase epitaxy (SPE) is used to activate an implanted dopant profile on a low thermal budget, often to concentrations much greater than the dopant's solid solubility limit.
Book ChapterDOI
State-of-the-art industrial crystalline silicon solar cells
Giso Hahn,Sebastian Joos +1 more
TL;DR: In this article, the development and optimization of different processing steps being part of the so-called industrial standard process based on p-type crystalline Si and a firing through SiN x :H process using screen-printing metallization technology is described and discussed.
Journal ArticleDOI
Growth and characterization of polycrystalline silicon ingots from metallurgical grade source material
Ekyo Kuroda,Tadashi Saitoh +1 more
TL;DR: In this paper, the impurity concentration in Si-A1 alloys was investigated and the growth rate of 0.5 mm/min was found to be the optimum for preparing relatively pure Si- A1 alloy.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.