Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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SiSn mediated formation of polycrystalline SiGeSn
TL;DR: In this article , a polycrystalline thin layers were grown using Sn nanodots as crystal nuclei, and the substitutional Sn content was estimated as high as 1.5%.
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Si Electrochemical Liquid Phase Epitaxy: Low-Temperature Growth of Hyperdoped Epitaxial Si Films
TL;DR: In this article , a hybrid approach that combined elements of conventional electrodeposition and traditional liquid phase epitaxy was demonstrated as a hybrid method to realize crystalline Si films suitable for optoelectronic applications.
Proceedings ArticleDOI
Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon
TL;DR: In this article, the authors used photoluminescence imaging, lifetime spectroscopy, and defect imaging along the ingot to help identify the defect(s) in Czochralski and Floating Zone (FZ) n-type silicon wafers.
Journal ArticleDOI
Low-Temperature Solid-Phase Epitaxy of Defect-Free Aluminum p+-doped Silicon for Nanoscale Device Applications
TL;DR: In this paper, a solid phase epitaxy (SPE) technique was developed to grow p+ aluminum-doped crystalline Si in a fully CMOS compatible process, where the location and dimensions are well controlled, even in the sub-100 nm range.
Journal ArticleDOI
Correlation of solubilities of various elements in silicon
TL;DR: In this paper, a relation which, dans un processus donne impliquant les defauts dans les solides (defaut de formation, diffusion, solution d'impurete, etc.), relie l'enthalpie a l'entropie correspondante is tablissement.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.