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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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References
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Journal ArticleDOI
On the Germanium-Silicon phase diagram
Journal ArticleDOI
Gold as a Donor in Silicon
E. Taft,F. Hubbard Horn +1 more
TL;DR: In this article, resistivity-temperature data show gold produces a donor level 0.33 ev above the occupied band in silicon, which is the donor level at which gold can be used as a donor.
Journal ArticleDOI
Distribution Coefficient of Boron in Germanium
Henry E. Bridgers,E. D. Kolb +1 more
TL;DR: The effective distribution coefficient of boron in germanium has been measured as a function of crystal growth rate as mentioned in this paper, and its behavior is shown to agree with that predicted by the theory of Burton et al. for a solute whose equilibrium distribution coefficient is greater than unity.