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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Leaching behavior of impurities in Ca-alloyed metallurgical grade silicon
Huixian Lai,Liuqing Huang,Chenghao Lu,Ming Fang,Ming Fang,Wenhui Ma,Pengfei Xing,Jintang Li,Xuetao Luo +8 more
TL;DR: In this article, the effect of silicon microstructure on its leaching behavior was systematically investigated by a combination of alloying refining with acid etching, and the acid removal efficiency of acid leaching of MG-Si was efficiently improved after alloying.
Journal ArticleDOI
Liquid phase epitaxy of silicon at very low temperatures
TL;DR: In this article, the ternary phase diagram of the GaAl-Si system was calculated using the quasi-regular solution model, and the growth temperature limitations due to the Ga Al-Si eutectic were indicated.
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Enhanced solubility and ion pairing of Cu and Au in heavily doped silicon at high temperatures
R.L. Meek,T.E. Seidel +1 more
TL;DR: In this article, the equilibrium solubilities of Cu and Au in silicon have been calculated for high temperatures 900-1100°C and heavy dopings (10 19 −10 21 cm −3 ) and compared with experimental results for uniformly bulk doped and diffusion doped material.
Journal ArticleDOI
Excess and Hump Current in Esaki Diodes
TL;DR: In this article, the authors described the origin of the excess and hump current in Esaki diodes in terms of discrete defect energy levels in the forbidden band and explained the excess current by energy dissipating transitions in which electrons start from a defect location within the junction, tunnel to a virtual state in a localized defect in the p region, and drop to the valence band by impact recombination.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.