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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Groups III and V impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals
TL;DR: In this article, the impurity solubilities of groups III and V elements in silicon resulting from laser anneals, flash anneal, and solid phase-epitaxial regrowth were studied.
Journal ArticleDOI
Impurities Removal from Metallurgical-Grade Silicon by Combined Sn-Si and Al-Si Refining Processes
TL;DR: In this article, the purification of metallurgical-grade silicon (MG-Si) by combined solvent refining processes has been studied, and the removal mechanism of impurities was explored.
Journal ArticleDOI
Spin-On Organic Polymer Dopants for Silicon
Megan L. Hoarfrost,Kuniharu Takei,Victor Ho,Andrew T. Heitsch,Peter Trefonas,Ali Javey,Rachel A. Segalman +6 more
TL;DR: In this article, a new class of spin-on dopants composed of organic, dopant-containing polymers is introduced, which offer a hybrid between conventional inorganic spin-ons and a recently developed organic monolayer doping technique that affords unprecedented control and uniformity of doping profiles.
Journal ArticleDOI
Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing
TL;DR: In this article, a new relation between free carrier effective mass (m ∗ ) and carrier concentration (10 19 −5 × 10 21 cm -3 ) was obtained, and the value of m ∗ increases significantly with the increase of carrier concentration, when carrier concentration exceeds the threshold of 10 −5 cm −3, and the result is discussed in relation to the occupation of electrons in a new valley of the conduction band.
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Purification of metallurgical grade Si combining Si–Sn solvent refining with slag treatment
TL;DR: In this article, a low-cost metallurgical route for solar grade silicon (SOG-Si) production, a novel process sequence of slag treatment and solidification refining using Si-Sn solvents under induction heating, followed by acid leaching was investigated.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
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Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
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Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.