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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Theoretical and Experimental Assessment of Thinned Germanium Substrates for III-V Multijunction Solar Cells
TL;DR: In this article, the potential of a thinned Ge subcell inside a standard GaInP/Ga(In)As/Ge triple-junction solar cell is assessed by simulations, pointing to an optimum thickness around 5-10 µm.
Journal ArticleDOI
Cobalt–germanium structures investigated by mössbauer spectroscopy
TL;DR: Mossbauer spectroscopy of Co germanides proves the existence of three stoichiometric phases: CoGe2, CoGe, and Co2Ge as mentioned in this paper, which indicate covalent bonds between (Co)Fe and Ge.
Journal ArticleDOI
Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique
Corentin Monmeyran,Iain F. Crowe,Russell M. Gwilliam,Christopher Heidelberger,Enrico Napolitani,David Pastor,Hemi H. Gandhi,Eric Mazur,Jurgen Michel,Anuradha M. Agarwal,Lionel C. Kimerling +10 more
TL;DR: In this article, two nonamorphizing co-implantation methods are proposed, one involving consecutive low dose fluorine implants, intertwined with rapid thermal annealing and the second, involving heating of the target wafer during implantation.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
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Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.