Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
Reads0
Chats0
TLDR
In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
More filters
Book ChapterDOI
Crystalline Silicon as a Material for Solar Cells
TL;DR: In this article, the physical effects of impurities as well as those of grain boundaries and other crystalline defects are discussed, in order to define the material requirements to obtain efficient solar cells; it is shown that grain boundaries can getter impurities and that impurities can passivate grain boundaries, so that more impure and imperfect crystals can be envisaged in future.
Journal ArticleDOI
The role of solitons and the kinetics of precipitate growth in boron doped silicon–germanium alloys
TL;DR: The time dependence of the thermoelectric transport properties of boron doped Si70Ge30 alloys has been investigated for times between 1 and 8700 h at an isothermal heat treatment temperature of 1100 K as discussed by the authors.
Journal ArticleDOI
Segregation Behavior of Metal Impurities During Al-Si Melt Directional Solidification with an Open Ended Crucible
Xiaolong Bai,Xiaolong Bai,Boyuan Ban,Jingwei Li,Zhiqiang Fu,Zhijian Peng,Chengbiao Wang,Jian Chen +7 more
TL;DR: In this article, the distribution characteristic and segregation behavior of metal impurities during directional solidification of Al-20Si, Al-30Si and Al-40Si alloys have been investigated.
Journal ArticleDOI
Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure
TL;DR: In this paper, direct band gap (DBG) electroluminescence and photo detection were studied at room temperature for n-type bulk germanium (Ge) diodes with a fin type lateral HfGe/Ge/TiN structure.
References
More filters
Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.