Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
Reads0
Chats0
TLDR
In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
More filters
Journal ArticleDOI
Mechanical stength of Czochralski silicon crystals with carbon concentrations from 1014 to 1016 cm−3
TL;DR: In this paper, the influence of oxygen precipitates on the mechanical strength of silicon crystals was studied using Czochralski-grown silicon crystals with carbon concentrations from 1014 to 1016 cm−3.
Journal ArticleDOI
The effect of temperature and doping on the segregation of In during solid‐phase‐epitaxial crystallization of Si
Robert Elliman,Z. W. Fang +1 more
TL;DR: In this article, the segregation of In during solid phase-epitaxial crystallization of amorphous Si layers is examined as a function of annealing temperature and the presence of p and n-type dopants.
Journal ArticleDOI
Chemical bonding states and dopant redistribution of heavily phosphorus-doped epitaxial silicon films: Effects of millisecond laser annealing and doping concentration
TL;DR: In this article, the effect of millisecond (ms) laser annealing and doping concentration on the chemical bonding states and dopant behaviors of P-doped epitaxial Si (Si:P) layers grown on Si (1 0 0 0) substrates using high-resolution X-ray photoelectron spectroscopy (HR-XPS), secondary-ion mass spectrograph (SIMS) and Auger electron spectrographic (AES) measurements was investigated.
Journal ArticleDOI
On the Determination of Diffusion Coefficient of Boron in Silicon
Journal ArticleDOI
Compensation engineering for uniform n-type silicon ingots
Maxime Forster,Maxime Forster,Bastien Dehestru,Antoine Thomas,Erwann Fourmond,Roland Einhaus,Andres Cuevas,Mustapha Lemiti +7 more
TL;DR: In this article, the authors proposed to use compensation engineering, by means of gallium co-doping, and demonstrate its potential to control the net doping along the ingot height, which exhibits high minority carrier diffusion length gratefully to compensation but degrades upon illumination due to the activation of the boron-oxygen defect.
References
More filters
Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.