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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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References
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Journal ArticleDOI
Preparation and Some Characteristics of Single‐Crystal Indium Phosphide
Journal ArticleDOI
Radiochemical Analysis of Silicon
J. A. James,D. H. Richaeds +1 more
TL;DR: The results of radioactivation analyses for some 12 elements are given for silicon from two sources in this article, and the results of segregation coefficient measurements using radiochemical methods are quoted for P, Fe Co, W, and Au.
Journal ArticleDOI
Properties of Some Germanium Single Crystals Grown from Solutions of Molten Metals
Journal ArticleDOI
Comparison of radio-copper and hole concentrations in germanium☆
K.B. Wolfstirn,C.S. Fuller +1 more
TL;DR: In this article, the changes in carrier concentration which occur when 64 Cu is introduced into p - and n -type germanium containing known concentrations of gallium and arsenic have been determined by resistivity measurements.