Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Journal ArticleDOI
The maximum possible conversion efficiency of silicon‐germanium thermoelectric generators
Glen A. Slack,Moayyed A. Hussain +1 more
TL;DR: In this paper, a model employing one valence band and two conduction bands has been used and detailed calculations for the efficiency of a thermoelectric generator made from a 70% Si-30% Ge alloy have been made over the temperature range from 300 to 1300 K. The utility/futility of GaP additions and grain boundary scattering as methods to increase the efficiency is discussed.
Journal ArticleDOI
Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization
Oliver Nast,Stuart Wenham +1 more
TL;DR: Aluminum-induced crystallization of amorphous silicon is studied as a promising low-temperature alternative to solid-phase and laser crystallization in this article, where the overall process of the Al and Si layer exchange during annealing at temperatures below the eutectic temperature of 577 °C is investigated by various microscopy techniques.
Book ChapterDOI
Electron Spin Resonance in Semiconductors
G.W. Ludwig,H.H. Woodbury +1 more
TL;DR: In this article, the application of electron spin resonance techniques to a particular group of crystalline semiconductors, including Si and related group IV elements and compounds, InSb and related 111-V compounds, and ZnS and related 11-VI compounds, is described.
Journal ArticleDOI
Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon
TL;DR: In this article, the formation of supersaturated substitutional alloys by ion implantation and rapid liquid phase-epitaxial regrowth induced by pulsed laser annealing has been studied using Rutherford backscattering, ion channeling analysis.
Journal ArticleDOI
Sintering of Covalent Solids
TL;DR: In this article, the sintering behavior of primarily covalently bonded β-SiC, Si, and Si3N4 was studied using surface area and densification measurements as well as observations of microstructures developed during firing.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.