Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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A calibration curve for room‐temperature resistivity versus donor atom concentration in Si:As
TL;DR: In this paper, the authors used the Hall constant to derive a fourth-order polynomial expression for the function ρ vs n D and compared with data derived from Hall constant determinations of donor concentration.
Journal ArticleDOI
Effect of iron addition (up to 10,000 ppmw) on silicon purification during Al–Si solvent refining
Yanlei Li,Jian Chen,Songyuan Dai +2 more
TL;DR: In this paper, the effect of iron addition on silicon purification during Al-Si solvent refining was studied. And the authors found that the iron addition does not affect boron and phosphorus removal rates.
Journal ArticleDOI
Is the End-of-Range Loops Kinetics Affected by Surface Proximity or Ion Beam Recoils Distribution?
E. Ganin,A. D. Marwick +1 more
TL;DR: In this article, the authors studied the formation and annihilation of dislocation loops formed beyond the amorphous/crystalline interface after indium and boron dual implantation and subsequent annealing in the 800-1 100°C temperature range.
Book ChapterDOI
Molecular Electronics: from Physics to Computing
Yongqiang Xue,Mark A. Ratner +1 more
TL;DR: The potentials and challenges of molecular electronics are discussed, and the fundamental knowledge gap that needs to be addressed for a successful introduction of molecule-enabled computing technology is identified.
Journal ArticleDOI
Low temperature liquid phase epitaxy of silicon from gallium solution
TL;DR: In this paper, the dopant concentration of the silicon layers is found to increase with decreasing saturation temperature and this unusual doping characteristic is ascribed to a little supersaturation near the phase boundary during growth.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.