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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Measurements of To Temperatures of Supersaturated Si-As Alloys
TL;DR: The congruent melting point of Si-As alloys has been measured in the range of 1.6 to 18.1 at. % by line source electron beam annealing as discussed by the authors.
Book ChapterDOI
Grain Boundary Segregation. Grain Boundary Diffusion
TL;DR: In polycrystalline materials, grain boundaries differ from the monocrystalline bulk by : i) their structure, ii) their electronic properties, iii) their chemical composition, iv) the atomic mobility of all the species as discussed by the authors.
Journal ArticleDOI
Impurity Solubility and Redistribution Due to Recrystallization of Preamorphized Silicon
Ray Duffy,Vincent Venezia,M. Hopstaken,G. C. J. Maas,T. Dao,Y. Tamminga,Fred Roozeboom,Karel van der Tak +7 more
TL;DR: In this paper, a relationship between the equilibrium distribution coefficient and metastable solubility was established for impurity redistribution in amorphous-crystalline (a/c) interfaces, which can be classified into three categories: before, during, and after recrystallization.
Book ChapterDOI
Supersaturated substitutional alloys in silicon formed by ion implantation and laser annealing
TL;DR: In this article, it was shown that group III and V dopants are highly substitutional in silicon after laser annealing even when the concentration exceeds the solubility limit, and this confirms the nonequilibrium nature of the liquid phase epitaxial regrowth process.
Journal ArticleDOI
On the mechanism responsible for phosphorus inactivation in heavily doped silicon
TL;DR: In this paper, the two proposed mechanisms of phosphorus inactivation in heavily doped silicon (precipitation and neutral E centres) are compared and four independent measurements (differential resistivity abd Hall mobility, neutron activation analysis, etch rate, and Rutherford backscattering) show that precipitation mechanism prevails.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.