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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Epitaxy and Nucleation in Cu and Ag Doped Amorphous Si
J. S. Custer,Michael Thompson,D. J. Eaglesham,Dale C. Jacobson,J. M. Poate,J.R. Liefting,F.W. Saris +6 more
TL;DR: The competition between solid phase epitaxy and random nucleation during thermal annealing of amorphous Si implanted with the fast diffusers Cu and Ag has been studied in this paper.
Journal ArticleDOI
Ionic radius‐lattice defect model for the distribution coefficients in Ge, Si, and III‐V compounds
TL;DR: In this paper, an ionic radius-lattice defect model is presented which describes the distribution coefficient of impurities in Ge, Si, and III-V compounds as a logarithmic dependency on the impurity radius of the impurities.
Journal ArticleDOI
Nano-Scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation
TL;DR: In this paper, the electrical properties and microstructure of phosphorus implanted p-type Si substrates were evaluated by four-point probe (4PP), Differential Hall Effect Metrology (DHEM), secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) techniques, after RTA 750-950°C and CO2 laser 120-140W annealing.
Journal ArticleDOI
Metastable Solid Solutions of Impurities in Silicon
James Williams,K.T. Short +1 more
TL;DR: In this paper, high resolution Rutherford backscattering and channeling techniques have been used to investigate the formation and stability of supersaturated solid solutions of As, Sb, In, Pb, Tl and Bi implants in (100) silicon.
Journal ArticleDOI
Getter formation in silicon by implantation of antimony ions
P. K. Sadovskii,A. R. Chelyadinskii,V. B. Odzhaev,M. I. Tarasik,A. S. Turtsevich,Yu. B. Vasiliev +5 more
TL;DR: In this article, a porous silicon layer as a getter of uncontrolled impurities has been prepared by implantation of Sb+ into silicon and subsequent thermal treatments, and the lifetime of nonequilibrium charge carriers in n- and p-type silicon wafers with a get-ter layer is 3-4 times longer than that without a getters.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.