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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Generation and Distribution of Dislocations by Solute Diffusion
TL;DR: In this article, the authors derived expressions for the density distribution and for the total number of dislocations generated and a mechanism of dislocation generation and distribution during the diffusion process.
Journal ArticleDOI
Oxygen precipitation in silicon
TL;DR: A review of the recent advances in the study of oxygen precipitation and of the main properties of oxide precipitates in silicon is presented in this article, where the most important techniques for the characterization of the precipitates are illustrated together with the most interesting and recent results.
Journal ArticleDOI
Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
TL;DR: In this paper, photo and dark current and capacitance transient experiments are described which can provide highly accurate and unique data of the electronic properties of impurity centers in semiconductors such as energy level, multiplicity of charge state, thermal and optical emission rates, thermal capture rates and the dependences of the rates and cross sections on sample temperature, static electric field and photon energy.
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Diffusion mechanisms and point defects in silicon and germanium.
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Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution Coefficients
TL;DR: In this paper, a two-band model was proposed to describe and predict the ionization potentials and electronic interband gaps of binary compounds and their alloys, and a revised method of calculating the excess heat of mixing of a substitutional alloy was presented.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.