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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal--Organic Source
Mitsuru Takenaka,Mitsuru Takenaka,Kiyohito Morii,Masakazu Sugiyama,Yoshiaki Nakano,Shinichi Takagi +5 more
TL;DR: In this article, the gas phase doping of arsenic (As) into (100), (110), and (111) germanium (Ge) substrates at 500 to 700 °C using a metal-organic vapor phase epitaxy (MOVPE) system with tertiarybutylarsine (TBAs) as the As source was investigated for the n-type source/drain formation of Ge metal-oxide-semiconductor field effect transistors (MOSFETs).
Journal ArticleDOI
Processes for Production of Solar‐Grade Silicon Using Hydrogen Reduction and/or Thermal Decomposition
TL;DR: In this article, a review of various types of SOG-Si production processes, particularly those based on the hydrogen reduction and/or thermal decomposition of halides and silane-based gases, is presented.
Journal ArticleDOI
Preparation of high-purity Ti–Si alloys by vacuum directional solidification
TL;DR: In this article, the authors used vacuum directional solidification technology to purify and separate high-purity Ti-Si alloys, which have different compositions (Ti-8.45%Si, Ti-63.7%Si and Ti-71.6%Si).
Journal ArticleDOI
Growth and characterization of Si1−xMnx alloys on Si(100)
TL;DR: Si1−xMnx alloy films of 50 nm thickness with 0.005 and 0.035 were grown by low-temperature molecular-beam epitaxy onto Si(100) substrates held at temperatures T in the range of 150°C⩽T ⩽350°C as mentioned in this paper.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.