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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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References
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Journal ArticleDOI
Nitrogen in Silicon
W. Kaiser,C. D. Thurmond +1 more
TL;DR: The concentration of electrically active impurity states in silicon grown from melts containing around 1019 atoms per cm3 of nitrogen is less than 1012 atoms percm3 as discussed by the authors.
Journal ArticleDOI
Triple Acceptors in Germanium
H. H. Woodbury,W. W. Tyler +1 more
TL;DR: In this article, the acceptor levels in the forbidden band of germanium have been identified for a series of samples in which the Cu concentration was varied from 0.04 ev and 0.26 ev from the conduction band.