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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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The electrical effect on Schottky barrier diodes of Si crystallization from Al-Si metal films
T. M. Reith,J. D. Schick +1 more
TL;DR: The barrier height of n-Si Schottky contacts made with Si-doped Al metallization is observed to vary from 0.79±0.02 V to 0.89±0 V after heat treatments at temperatures from 400 to 550°C as discussed by the authors.
Journal ArticleDOI
High carrier mobility in orientation-controlled large-grain (≥50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization
Jong Hyeok Park,Jong Hyeok Park,Kenji Kasahara,Kohei Hamaya,Kohei Hamaya,Masanobu Miyao,Taizoh Sadoh +6 more
TL;DR: In this article, the electrical properties of orientation-controlled large-grain gold-induced-crystallization (GIC) crystals on flexible-plastic directly formed by nucleation-controlled Gold-Induced Crystallization was examined.
Journal ArticleDOI
Solubility, diffusion and thermodynamic properties of silver in silicon
TL;DR: In this article, concentration-depth profiles of Ag in Si wafers were measured with the aid of neutron activation analysis combined with serial removal of sections, and the authors concluded that interstitial Agi is the predominant configuration in Si without dislocations.
Journal ArticleDOI
The P−Si (Phosphorus-Silicon) system
Journal ArticleDOI
Solid‐Phase‐Epitaxial Growth in Ion‐Implanted Silicon
Jagdish Narayan,O. W. Holland +1 more
TL;DR: In this article, the details of solid-phase-epitaxial (SPE) growth are obtained in ion-implanted silicon amorphous layers after furnace annealing in the temperature range 450 to 600°C.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.