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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Iron impurities in Si3N4 processing
TL;DR: In this article, the atomic environment of iron impurities was investigated during the processing cycle of reaction-bonding silicon nitride (RBSN), and several analysis techniques were utilized, including X-ray photoelectron spectroscopy (XPS), extended x-ray absorption fine structure (EXAFS), and electron spin resonance (ESR), to examine iron impurity in the starting silicon powder, in sintered silicon compacts, and in RBSN materials.
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Electrochemical production of silicon
Kouji Yasuda,Toshiyuki Nohira +1 more
TL;DR: In this paper , different scientific investigations of the electrochemical production of silicon by classifying them based on the employed principles (electrorefining, electrowinning, and solid-state reduction) and electrolytes (molten oxides, fluorides, chlorides and ionic liquids [ILs]) are discussed.
Silicon Nanocrystal Films for Electronic Applications
TL;DR: In this article, the optical, structural, and electronic properties of silicon nanocrystal layers before and after two different methods of thermal post-processing are investigated in a phenomenological model for the situation with porous particle precursor layers.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.