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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Ultradense phosphorus in germanium delta-doped layers
TL;DR: In this paper, an ultranarrow 2-nm-wide layer with an electrically active sheet carrier concentration of 4×1013 cm−2 at 4.2 K was constructed.
Journal ArticleDOI
Removal of aluminum from metallurgical grade silicon using electron beam melting
TL;DR: In this paper, small amounts of metallurgical grade silicon were melted in an electron beam furnace in different experimental conditions in order to investigate the aluminum evaporation behavior during the electron beam melting (EBM) process.
Journal ArticleDOI
Metastable doping behavior in antimony‐implanted (100) silicon
J. S. Williams,K. T. Short +1 more
TL;DR: In this paper, high-dose antimony-implanted (100) silicon has been activated by furnace annealing at temperatures ∼600°C to achieve active concentrations up to 3×1020 cm−3, an order of magnitude in excess of the equilibrium solubility limit for antimony in silicon.
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n-Type emitter epitaxy for crystalline silicon thin-film solar cells
TL;DR: The epitaxial emitter could be an alternative method of n-type emitter processing with adjustable emitter profile and short deposition time as mentioned in this paper, and it is possible to simplify the solar cell process when depositing the emitter by epitaxy in-situ after the growth of the base.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.