Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
Reads0
Chats0
TLDR
In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
More filters
Journal ArticleDOI
Ultra-low Contact Resistivity by High Concentration Germanium and Boron Ion Implantation Combined with Low Temperature Annealing
TL;DR: In this paper, a minimum contact resistivity of 6.9× 10 −9 Ω·cm 2 has been achieved in an AlSi(lwt%)Cu(0.5wt%) alloy / Si system by using heavy dose ion implantations of Ge and B combined with low temperature annealing as low as 550°C.
Journal ArticleDOI
Iron accumulation at the Si-SiO2 interface and possible reduction of SiO2
TL;DR: In this paper, it was found that iron atoms accumulated at the Si-SiO 2 interface of oxidized silicon crystals where iron had been introduced by in-diffusion prior to the oxidation at 1000°C.
Journal ArticleDOI
Thermal conductivity and inelastic X-ray scattering measurements on SiGeSn polycrystalline alloy
Yosuke Shimura,Kako Iwamoto,Ryo Yokogawa,Motohiro Tomita,Hirokazu Tatsuoka,Hiroshi Uchiyama,Atsushi Ogura +6 more
TL;DR: In this paper, the impact of Sn on Si1-xGex through its thermal conductivity and phonon properties was investigated to develop an attractive material for thermoelectric devices.
Journal ArticleDOI
Pulse‐laser‐induced supersaturation of indium and antimony in germanium
TL;DR: In this paper, a pulsed ruby laser has been used to produce enhanced solubilities of indium and antimony in germanium using Rutherford backscattering spectrometry and electrical measurements.
Journal ArticleDOI
Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au.
See Wee Chee,Martin Kammler,Prabhu Balasubramanian,Mark C. Reuter,Robert Hull,Frances M. Ross +5 more
TL;DR: This work uses focused beams of Ga(+), Au(+) and Si(++) ions to induce local microstructural changes in single crystal silicon, and shows that the resulting microstructure depends on the ion species.
References
More filters
Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.