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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Tellurium in silicon: Part I: Channeling and rutherford backscattering studies of tellurium implanted silicon
TL;DR: In this paper, the displacement cross-section of substitutional Te-atoms in laser annealed silicon for 2 MeV He+-ions was determined as 5.6(20) × 10−21 cm2.
Journal ArticleDOI
pn-Junctions in silicon with blocking capabilities beyond 2.5 kV produced by rapid thermal processing
D. Nagel,U. Kuhlmann,R. Sittig +2 more
TL;DR: In this paper, two different methods of rapid thermal processing for the doping of Si with Al have been developed (Al-diffusion in a halogen lamp RTP-system and Al-doping via formation of AlSi eutectic and epitaxial regrowth in a resistive graphite-heater RTP reactor).
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Determination of trace elements in a silicon single crystal
TL;DR: Instrumental neutron activation analysis was applied to the determination of trace impurity elements in a silicon single crystal as discussed by the authors, which was compared with those in a single crystal in polysilicon melt.
Journal ArticleDOI
Thin-film thermoelectric generator based on polycrystalline SiGe formed by Ag-induced layer exchange
TL;DR: In this paper, an Ag-induced layer exchange enables the synthesis of Si1−xGex (x: 0−0.3) layers at 500°C and dynamically controls the Fermi level owing to the self-organizing manner of impurity doping during layer exchange.
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The Diffusion of Iron and Nickel to Silicon Surfaces
J. W. T. Ridgway,D. Haneman +1 more
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
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Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
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Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.