Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Laser‐Assisted Wet‐Chemical Doping of Sintered Si and Ge Nanoparticle Films
Benedikt Stoib,Anton Greppmair,Nils Petermann,Hartmut Wiggers,Martin Stutzmann,Martin S. Brandt +5 more
TL;DR: In this article, a detailed study of the doping of germanium films with arsenic reveals diffusion of dopants into the film and their adsorption to the nanoparticle surface as kinetically governing steps.
Journal ArticleDOI
Enthalpies de mélange des alliages liquides de gallium et de germanium
TL;DR: In this article, the enthalpies of mixing of the liquid binary alloys of gallium and germanium were measured using a microcalorimeter, showing that the mixing is exothermic.
Journal ArticleDOI
Amorphisation, Crystallisation And Related Phenomena In Silicon
TL;DR: In this paper, a review examines recently observed phenomena associated with amorphization and crystallisation of silicon under ion bombardment and furnace annealing, including defect production, amorphisation, diffusion and segregation of defects and impurities, and ion-beam-induced (epitaxial) crystallisation.
Book ChapterDOI
Solubility limit of dopants in laser-treated silicon
TL;DR: The solubility of several dopants (Sb, Ga, Bi, In) in laser treated silicon has been investigated in this paper, where the dopants were introduced by vacuum deposition followed by a ruby laser irradiation.
Journal ArticleDOI
Ultralow Contact Resistivity for a Metal/p-Type Silicon Interface by High-Concentration Germanium and Boron Doping Combined with Low-Temperature Annealing
TL;DR: In this article, a contact resistivity of 6.9×10-9 Ωcm2 has been obtained in an AlSi (1 wt %)-Cu (0.5 wt ) alloy/silicon system by using heavy-dose ion implantations of germanium and boron combined with low-temperature annealing.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.