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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate
Huiling Shang,Kam-Leung Lee,P. Kozlowski,Christopher P. D'Emic,I. Babich,E. Sikorski,Meikei Ieong,Hon-Sum Philip Wong,Kathryn W. Guarini,Wilfried Haensch +9 more
TL;DR: In this paper, self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode are presented.
Journal ArticleDOI
Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+
M. Y. Tsai,B. G. Streetman +1 more
TL;DR: In this article, the electrical properties of recrystallized amorphous silicon layers, formed by BF+2 implants or Si++B+ implants, have been studied by differential resistivity and Hall effect measurements.
Journal ArticleDOI
Operating limits of Al-alloyed high-low junctions for BSF solar cells
TL;DR: In this article, the effective surface recombination velocity of the high-low junction (Seff) and of the base diffusion length are carried out for Al-alloyed n+pp+ bifacial cells and the results are presented in form of histograms.
Journal ArticleDOI
Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing.
Johnny C. Ho,Roie Yerushalmi,Gregory C. Smith,Prashant Majhi,Joseph Bennett,Jeffri Halim,Vladimir N. Faifer,Ali Javey +7 more
TL;DR: The results clearly demonstrate the versatility and potency of the monolayer doping approach for enabling controlled, molecular-scale ultrashallow junction formation without introducing defects in the semiconductor.
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Ion-beam-induced epitaxial crystallization and amorphization in silicon
Francesco Priolo,Emanuele Rimini +1 more
TL;DR: In this paper, the ion-beam-induced epitaxial crystallization (IBIEC) and planar amorphization of amorphous Si (a-Si) layers onto single-crystal Si substrates is reviewed.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.