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Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
Citations
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X‐ray observations of induced dislocations at simple planar structures in silicon
A. Cerutti,C. Ghezzi +1 more
TL;DR: In this paper, the Burgers vectors of rectilinear dislocations lying inside the diffused zone, and of boundary dislocation loops have been determined, and the generation processes of the observed dislocation are briefly discussed.
Journal ArticleDOI
Altering the thermal conductivity of phosphorus-doped Si-Ge alloys by the precipitation of dopant
N Savvides,D M Rowe +1 more
TL;DR: The thermal conductivity and resistivity of heavily doped n-type Si63.5Ge36.5 and Si80Ge20 alloys have been determined at 300K as a function of period of isothermal heat treatment at 773K as discussed by the authors.
Journal ArticleDOI
Optimization of Germanium (Ge) $\hbox{n}^{+}/\hbox{p}$ and $\hbox{p}^{+}/\hbox{n}$ Junction Diodes and Sub 380 $^{\circ}\hbox{C}$ Ge CMOS Technology for Monolithic Three-Dimensional Integration
TL;DR: In this paper, a low-temperature gate stack comprised of Al/Al2O3/GeO2 by ozone oxidation technique was used to construct n-and p-channel Ge metal-oxide-semiconductor field effect transistors (MOSFETs) at sub-360 and 380 °C.
Journal ArticleDOI
Small-Signal Transient Double Injection in Semiconductors Heavily Doped with Deep Traps
TL;DR: In this article, the small signal transient response for double-injection diodes operating in the low injection square-law regime is discussed, and an expression for the ac impedance is derived.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.